Virginie has been working in the III-V semiconductor industry for 10 years, at Agilent and Bookham in the UK, on GaAs and InP based quantum well lasers for optical telecommunications. She started on the epitaxy and then moved on to chip reliability. Before that, she was working in research laboratories in France (Lyon), Canada (McMaster University) and the UK(University of Cambridge), on the epitaxy of GaInAs(P) strained quantum wells and quantum dots for high electron mobility transistors and lasers on InP based materials. Virginie did her Ph.D. at Ecole Centrale de Lyon on the Molecular Beam Epitaxy growth and characterisation of strained GaInAs quantum well in AlInAs/GaInAs heterostructures on InP for high electron mobility transistors.